| 摘要 |
PURPOSE:To improve the current injection efficiency by masking the portion below a stripe-shaped electrode different in the conduction type from the substrate in an active layer and a light and carrier confining layer the same in the conduction type as the substrate. CONSTITUTION:A light confining layer 15 of an N type Al0.3Ga0.7As 0.8mum thick, a light guiding layer 13 of an N type Al0.4Ga0.9As 0.4mum thick, an active layer 14 of an N type GaAs 0.1mum thick and a light and carrier confining layer 15 of a N type Al0.3Ga0.7As 1.5mum thick are laminated on a semiconductor substrate 11 of an N type GaAs having a groove 18. A stripe-shaped P type electrode 17 is provided on the layer 15 while the parts 19 and 20 are made a P type below an electrode on the layers 14 and 15. Therefore, laser oscillation occurs in an N type region of an active layer 14 to prevent the diffusion of the carrier injected thereby improving the current injection efficiency. |
