| 摘要 |
PURPOSE:To lessen the gate length while reducing the gate electrode resistance by covering the side of a gate electrode with an insulating material containing component elements of a gate electrode material. CONSTITUTION:An active layer 2 made up of an N type conductive layer is laminated on a semiconducing GaAs substrate 1. Then, with a photosensitive resin 6 as mask, Al51 is formed as gate electrode. Then, the side of the Al51 is converted into an aluminum oxide 7 by anode oxidation method for lessen the gate electrode length thereby forming a gate electrode 52. A photoetching and evaporation are used to form a source electrode 3 and a drain electrode 4 made up of gold-germanium which are subjected to a heat treatment. |
