| 摘要 |
PURPOSE:To obtain a micro-resistance element by providing a polycrystalline Si layer containing a large quantity of impurities on the diffused region provided on a semiconductor substrate, and implanting O or N ions in the layer. CONSTITUTION:On a p type Si substrate 21, an n type region 22 is provided by diffusion. The whole surface including the region 22 is coated with an SiO2 film 23, in which a contact opening 24 is made corresponding to the region 22. Then, a polycrystalline Si layer 25 containing a high rate of P is accumurated on the whole surface, and patterned so that the layer 25 is left only on the opening 24 and the film 23 on the circumference of the opening 24. After that, a SiO2 film 26 to be a mask is provided over from the circumference of the layer 25 to the film 23, and O or N ions are implanted in the layer 25 to be amorphous, which is then treated on heating to obtain a high resistivity, and coated with an Al electrode 27. This permits a resistance element having a geometry dimension of the order of 2mum to be formed without the need of allowance of the mask dimension. Consequently, the integrating density is raised. |
