| 摘要 |
PURPOSE:To improve the gate sensibility of a lateral n-gate thyristor by coating the thyristor surface with a laminated film of SiO2 and Si3N4 having prescribed thickness after all the diffusion processes. CONSTITUTION:On an n<+> type Si substrate, an n type epitaxial layer 2 is grown and coated with an SiO2 film 3 having a thickness of 0.8-1.2mum, in which openings are made to produce by diffusion a p type emitter region 4 and an annular p type base region 5 surrounding the region 4 in the layer 2. Then, an n type emitter region 6 is provided in the region 5, and an SiO2 film 7 having a thickness of 1.0- 1.5mum is grown by the chemical vapor deposition on the whole surface of that the total thickness of the films 3 and 7 is 2.0-3.5mum. After that, an Si3N4 film 9 having a thickness of 0.1-0.2mu is grown on this in a surface at 900+ or -50 deg.C. Then, windows are open, and an electrode 8 is provided in the diffused region. This permits the current amplification factors of the npn and pnp to increased. Consequently, the gate sensibility is prevented from falling. |
