| 摘要 |
PURPOSE:To obtain the wirings by a method wherein there are bored openings in an Si3N4 film laid upon an SiO2 film by using holes in the stacked layers being lifted off and then openings are formed in the SiO2 film, thereby providing electrode windows through the self-alignment by only one number of matching of a mask. CONSTITUTION:An N epitaxial layer laid upon a P type substrate and including an N<+> buried layer is separated by 104 and an N<+> connecting layer 105 is formed. After coating SiO2 106 and Si3N4 107 thereon, ions are selectively injected to form P<+> layers 106 and 108. Then, PSG110 and Si3N4 111 are laid upon by turns and a resist mask 112 is applied thereon. By etching them successively to expose SiO2 106 and removing it with use of a mixture of NH4F and acetic acid, there are formed visors at the Si3N4 film 111. The mask 112 is removed and an N<+> layer is selectively formed by ion-injecting under an anotehr mask. Then, Al 117 is evaporated. Finally, predetermined electrodes 118 are formed by solving the PSG110 to eliminate it. According to this method, connecting holes and the wirings can be formed through the self-alignment by only one number of matching of the mask and further the wirings properly connected to the diffusion layer can be obtained with high degree of integration. |
