| 摘要 |
PURPOSE:To provide a substrate appropriate to a Schottky FET for a small signal, by epitaxially growing a high resistance layer of Fe-added GaAs, a GaAs layer supplied with no impurities and an active layer of GaAs supplied with a prescribed impurity on a single crystal substrate of Ge or Si. CONSTITUTION:A high resistance layer of Fe-doped GaAs is grown on a single crystal substrate of Fe or Si by a Ga-AsCl3-N2 gas-phase epitaxial growing method with carrier gas of N2 containing a small quantity of H2. At that time, the substrate is maintained at a temperature of 700 deg.C or more for a short time to produce a GaAs crystal nucleus. After that, the substrate is kept at a temperature of 540-640 deg.C so that a nondoped GaAs layer and an active layer of GaAs doped with a prescribed dopant are grown on the high resistance layer. Said procedure results in dispensing with a conventional expensive semi-insulating GaAs substrate and providing a substrate for a small signal. |
