| 摘要 |
PURPOSE:To easily obtain a resist image of specified size by one exposure using one photomask having transparent, translucent, and opaque areas each having a density in a specified range. CONSTITUTION:In fabricating a device, e.g., consisting of thick film electrodes 2 for external terminals, thin film strip lene 3, and thin film resistor 4, the raw material to be treated is coated with photoresist while rotating it in a thickness of 5.5mum between electrodes 2 and 28mum on central thin film areas. In order to form an image of specified size by one exposure to light, a photomask prepared by forming transparent pattern 2 of fog density <=0.05, opaque pattern 3 of density >=2.5, and translucent pattern 4 of 0.05-2.5 density on base 1 of glass, polymer film, or the like is used, and said material coated with said photoresist is irradiated with light, developed, and etched to form a desired pattern. |
