发明名称 MANUFACTURE OF GAAS INTEGRATED CIRCUIT
摘要 <p>PURPOSE:To improve aligning accuracy of a GaAs integrated circuit by a very simple operation and to implement high performance and reproducibility of the integrated circuit, by aligning the arrangements of alignment patterns in the similar way, and providing accuracy measuring patterns. CONSTITUTION:A numeral 20 is the substrate of a GaAs integrated circuit. Element patterns 22 are formed on an element forming region 21. Alignment pattern forming regions 23 are arranged on both right and left sides. First alignment patterns 111 are aligned at positions of A-E. Second alignment patterns 112 for gate metals are provided at positions of F beneath the E. New alignment patterns 113-116, which are directly aligned with the second alignment patterns 112, are provided at positions G-J. When these alignment patterns are arranged, the patterns having high alignment accuracy are selected and the alignment can be performed.</p>
申请公布号 JPS6489426(A) 申请公布日期 1989.04.03
申请号 JP19870244060 申请日期 1987.09.30
申请人 TOSHIBA CORP 发明人 MOCHIZUKI MASAO
分类号 H01L21/265;H01L21/027;H01L21/30;H01L21/68;H01L27/095;H01L29/80 主分类号 H01L21/265
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