| 摘要 |
PURPOSE:To have ions reached a substrate with desired and effective energy by applying alternating current such as low-frequency square waves, triangular waves, sine waves to an electrode which control a plasma electric potential. CONSTITUTION:For example, capacity type coupling electrodes 10, 11 are provided on and beneath a vacuum container 5 accommodating a semiconductor substrate 6 and a high-frequency oscillator 3 for plasma generation is connected to the electrode 10. Such a plasma treatment device is independently provided with a low- frequency oscillator 12 which generates sufficiently lower frequencies than the frequencies of the high-frequency oscillator 3 and has ions followed sufficiently. Treatment such as plasma etching, deposition are performed by applying alternating current such as square waves, triangular waves, sine waves to the electrode 10 and by having ions with desired energy reached the substrate 6. In this way, high accurate treatment will be performed by controlling the energy of the plasma. |
