| 摘要 |
PURPOSE:To easily obtain the LED having high green light emitting efficiency by employing a low doner density N type GaP region without adding nitrogen thereto. CONSTITUTION:A predetermined temperature difference is provided in a GaP-Ga solution, phosphorus pressure within optinum range is applied onto the solution, GaP stock material is dissolved in the solution retained at predetermined high temperature, and is epitaxially grown at the low temperature portion thereof. In this manner there can be obtained an N type GaP region having doner density of less than 1X10<16>cm<-3> without adding nitrogen thereto. The GaPLED forming an N type GaP region, a P type region having acceptor density implanted with sufficient amount of holes within the N type region, and a P-N junction incorporates very high light emitting efficiency. Since no nitrogen is added thereto, a light having visulally cleary peak wavelength of less than 5,600Angstrom can be easily generated in high light emitting efficiency. |
