| 摘要 |
PURPOSE:To prevent the thermal transformation of the substrate easily by covering the surface of the substrate to be grown epitaxially with the semiconductor crystal of the same constituent element. CONSTITUTION:A GaAs crystal 23 is overlayed on a GaAs substrate 22 on which epitaxial growth is performed and arranged in a reacting tube. Then, the temperature of the furnace is increased and only H2 is flowed. When the temperature of the furnace has reached the steady state, a rod 25 is operated, and a quartz zig 24 is drawn to the down stream. Then, AsCl3 gas which is diluted by H2 is introduced, and the epitaxial growth is performed at a specified concentration and thickness. In this constitution, when the epitaxial layer is formed on a compound semiconductor substrate such as GaAs, InP, and the like which contain elements having a high vapor pressure such as As or P as constituent elements, the thermal transformation of the substrate can be prevented. |
