| 摘要 |
PURPOSE:To enable automatically matching of a mask in a semiconductor by forming a target pattern used for photoetching after formation of an interlayer insulating film thereon at the time of photoetching an electrode. CONSTITUTION:An SiO2 film 2 is formed on an Si substrate 1, and a target pattern 3 for a mask is formed thereon when photoetching the film 2 for diffusing a base. The film 2 is then photoetched to diffuse an emitter. At this time the target for the mask is matched to the pattern 3. Then, the film 2 is contact photoetched. Subsequently, aluminum is evaporated thereon, and a target pattern 6 is formed thereon when photoetching an electrode pattern. Thereafter an interlayer insulating film 5 is formed on an aluminum electrode 4, and a through-hole 7 is perforated thereat. At this time the mark for the mask is matched to the pattern 6. Then, an aluminum electrode 8 is formed on the film 5. In this state the s/n ratio of a wafer detection signal becomes very large to enable automatical matching of the mask. |
