| 摘要 |
PURPOSE:To reduce the generation of noises by providing embeded regions located at the portions under source and drain regions in forming the J-FET so that they are positioned as closely as possible to a substrate, and confining the current path between the source and drain regions mostly to the embeded regions. CONSTITUTION:An N type layer which is to become a channel region 2 is grown on a P type semiconductor substrate 1, a P type diffused region 6 which intrudes into the substrate 1 is provided, thereby the channel region 2 is separated in an island shape. Then, an N<+> type source region 4, a drain region 5, and a P type gate region 3 located between the regions 4 and 5 are diffused and formed in said region 2. Thereafter, all the surface is covered by an oxide film 7, windows are provided, electrodes 4a and 5a are deposited on the region 4 and 5, respectively, thereby the J-FET is formed. In this constitution, N<+> embeded retions 8 are provided at the locations under the regions 4 and 5 in the region 2, respectively, so that said positions are located as closely as possible with respect to the surface of the substrate 1. Therefore, the same effect as shortening the distance between the regions 4 and 5 is attained, and the high-frequency characteristics are improved. |
