| 摘要 |
PURPOSE:To increase the mutual conductance in a linear region and to obtain high speed in the MOS transistor having a crank-shaped channel, by depositing a film comprising a conductive material or a low resistivity material on at least one of the source diffused region and the drain diffused region. CONSTITUTION:The drain diffused region 2 and the source diffused region 3, both of which have the protruded branched portions, are formed on a semiconductor substrate 1, and the MOS transistor having the crank-shaped channel is constituted. Then, all the surface is covered by an oxide film 6, and contact holes 7 are perforated so as to correspond to the regions 2 and 3. An electrode layer 4d, wherein a low- resistance material comprising Al, polycrystal Si, is deposited on the region 2 on the contact hole, and the end of the electrode 4d is connected to a drain terminal D. By the same method, an electrode layer 4s is deposited on the region 3 and connected to a source terminal S. The oxide film 6 is also deposited on the region 2a which is branched from the region 2, and a hole 9 is perforated. A low resistance film 8 which is connected to the region 2a is provided, and the potential at the tip A of said film 8 is brought to the potential at the terminal D. |
