| 摘要 |
PURPOSE:To obtain a Schottky barrier having excellent characteristics by employing layered metals of Ta and Au as an electrode when the Schottky electrode is formed on the semiconductor substrate; and specifying the temperature of the substrate, the evaporating speed, and the thicknesses of the layers. CONSTITUTION:An SiO2 film 2 is deposited on an epitaxial growth layer 1a of a substrate 1 comprising an epitaxial growth layer 1a and an Si substrate 1b. Then, a hole 3 is perforated in the film 2 in order to form a Schottky electrode on the growth layer 1a. A Ta layer 4 and an Au layer 5 are layered on the exposed surface of the growth layer 1a so that both layers extend on the periphery of the hole in the film 2, and an electrode 45 is formed. In this constitution of the electrode 45, the temperature of the substrate is kept at 100-200 deg.C, and the Ta layer 4 with the width of 0.1-0.4mum is deposited at the evaporation speed of 200Angstrom /minute or less. The thickness of the Au layer 5 is 1-2mum, and the temperature of the substrate 1 is specified as 250 deg.C or less at this time. In this method, the difficulty in forming the Ta film is overcome, and the barrier having no peel-off and cracks can be obtained. |
