| 摘要 |
PURPOSE:To eliminate separation of electrodes occurred owing to interposition of an oxide layer in a semiconductor element by forming an ohmic electrode on a semiconductor substrate and then etching it to remove exposed surface layer thereof. CONSTITUTION:AuBe alloy layer and AuSi alloy layer 2 are formed on the exposed surfaces of P type region 1p and N type region 1n of a GaP substrate 1. The layer 2 is heated in N2 gas to form an ohmic electrode 2' thereon. In this manner Be, Ga oxide layer 3 is formed on the exposed surface layer of the electrode 2'. Then, the substrate 1 is heated in hydrochloric acid, is cooled, and dried. An Au layer is evaporated subsequently on the electrode 2' to form in predetermined electrode pattern thereon as a bonding electrode 4. Resultantly, it can eliminate separation of electrode produced owing to interposition of an oxide layer to improve the bonding efficiency and the yield thereof. |
