| 摘要 |
A process for preparing layers with a superficial composition of Hg1-xCdxTe comprising the steps of producing a wafer by forming a layer of superficial composition Hg1-yCdyTe on a substrate of CdTe, y being less than the desired value x, and subjecting this wafer to a thermal interdiffusion treatment at a temperature of between about 350 DEG and about 750 DEG C., under such conditions that the layer of Hg1-yCdyTe cannot decompose. |
