Fabrication of a semiconductor device in a simulated epitaxial layer,申请号GB19800013170-传众专利搜索

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发明名称	Fabrication of a semiconductor device in a simulated epitaxial layer
摘要
申请公布号	GB2056765(A)	申请公布日期	1981.03.18
申请号	GB19800013170	申请日期	1980.04.22
申请人	GENERAL INSTRUMENT CORP	发明人
分类号	H01L21/225;H01L21/265;H01L29/78;(IPC1-7):H01L21/26	主分类号	H01L21/225
代理机构		代理人
主权项
地址

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