摘要 |
PURPOSE:To prevent an SiO2 film from peeling off by eliminating the generation of bubbles of low-fusion-point glass in baking by providing a chromium-reaction- preventive film between the low-fusion-point glass, used for cover-glass bonding, and an insulating layer SiO2 film. CONSTITUTION:On substrate 1, lower magnetic film 2, insulating layer SiO25', conductor layer 3, insulating layer SiO25'', upper magnetic layer 4, and protective layer SiO25 are formed successively by sputtering, vapor-deposition, etc. On protective film SiO2, chromium-reaction-preventive film 9 is formed by sputtering, vapor-deposition, etc., and on it, cover glass 7 is bonded by low-fusion-point glass 6'. Next, this body is cut into a wafer, which is stuck to a slider by low-fusion- point glass and lapped to form a gap. In this method, providing the chromium film eliminates the generation of bubbles in low-fusion-point glass 6' due to reaction, and cover glass 7 can be bonded with high reliability. |