| 摘要 |
PURPOSE:To obtain a uniform and less contaminated III-V group epitaxial layer in the Periodic Table by a method wherein the respective vapor of volatile compound of III and V group compound is introduced into an evacuated reaction chamber, and the chemical reaction is made occur over a substrate within the reaction chamber. CONSTITUTION:Only the vapor of III group and V group elements are introduced without using of carrier gas, when a substrate which to be grown is entered in a reaction chamber holding a vaccum condition and makes III-V group semiconductor layer epitaxially grown thereon by heating at a prescribed temperature. That is, GaAs semi-insulating substrate which to be grown is provided in the reaction chamber made of quartz having an electric furnace 4 at the outer circumference by mans of a substrate holder 1 made of quartz, and the inside of the reaction chamber 3 is made vaccum condition, 6 Torr and the substrate 2 is heated at about 700 deg.C. In this condition, N+ type GaAs layer is epitaxially grown over the substrate 2 by feeding vapor of volatile compound 7 such as AlCl, GaCl, or the like containing III group element through one gas inlet 5 provided at the reaction chamber 3 and vapor of volatile compound 8 such as PH3, AsH4, or the like containing V group element through another gas inlet 6. |
