| 摘要 |
PURPOSE:To eliminate the disconnection of wires formed on the surface of the semiconductor device by growing an epitaxial layer through an insulator having predetermined pattern on a semiconductor substrate, doping impurity on unnecessary part of a polycrystalline layer formed on a film, etching only the part, and flattening the surface. CONSTITUTION:An n<+> type buried region 3 and a p<+> type channel breakdown region 4 surrounding the region 3 are formed on a p type Si substrate 1, and an SiO2 film 2 having an opening is coated on the entire region 3 surface. Then, an n type layer is epitaxially grown on the entire surface, monocrytalline layer 5a and polycrystalline layer 5b are respectively formed on the region 3 and the film 2, a resist film 60 is coated on the entire surface to bury the layer 5a recessed, and the entire surface is flattened. Thereafter, p type impurity ion is implanted through the film 60, a p type layer 50b is formed only on the layer 5b by utilizing the stepwise difference between the monocrystal and the polycrystal, the film 60 is removed, and only the layer 50b accelerated at the etching speed is etched and removed. Subsequently, the configuration of the entire epitaxial layer is formed in desired shape, a base region 7b or the like is formed thereon, and wires are formed on the flattened surface thereof. |
