发明名称 |
Pretreatment of photoresist masking layers resulting in higher temperature device processing |
摘要 |
Method for the production of an LSI circuit device, in which method an organic compound film such as photoresist films is suitably treated to become a heat resistant film and it is used in various production processes as a mask pattern at a temperature of more than 200 DEG C. without deforming the original size of the mask pattern.
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申请公布号 |
US4253888(A) |
申请公布日期 |
1981.03.03 |
申请号 |
US19790047241 |
申请日期 |
1979.06.11 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KIKUCHI, KAZUYA |
分类号 |
H01L21/3105;H01L21/3115;(IPC1-7):H01L21/26;B05D3/06 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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