| 摘要 |
PURPOSE:To form extremely fine pattern of <=1-2mu, by using a film, which has been formed by plasma reaction having different chemical etching property and plasma etching property and which contains at least silicon and nitrogen, as an interposing film. CONSTITUTION:A silicon nitride film 5 is formed on a substrate 1 by plasma CDV method, then a resist 2 is painted on the whole surface of the film 5 and is exposed to form a desired pattern and reversed pattern. The film 5 formed by plasma CDV method is etched using the resist 2 pattern as a mask. After formation of metallic film 3 such as Al etc. by vapor deposition, the whole substrate is immersed in a solvent for the resist in order to dissolve the resist 2, at the same time metal such as Al formed on the resist is removed. The film 5 is removed by etching by using an etching soln. which does not etch Al, hereby a pattern made of only metal such as Al is formed on the substrate. It is possible to make a pattern of primary coated film by using a piled film as a primary coated film.
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