发明名称 Wide bandwidth CMOS class A amplifier
摘要 A CMOS inverter is coupled to drive a bipolar transistor emitter follower which has a field effect transistor load. The load transistor is provided with a d-c bias that causes the circuit to function as a class A amplifier. The amplifier has a gain-band-width product that is much higher than can be achieved with CMOS inverters alone and such amplifiers can be cascaded to achieve extremely high gain values. It is preferred to obtain the required class A bias from a similar circuit wherein the load transistor is replaced by a resistor and the emitter follower has its output directly coupled to the CMOS inverter input. This means that the voltage across the resistor is that value that will operate the bias circuit at its trip point independent of the manufacturing variables that affect transistor threshold values. This amplifier configuration is useful in constructing high-speed, high-sensitivity clocked comparators and clocked latches.
申请公布号 US4253033(A) 申请公布日期 1981.02.24
申请号 US19790034063 申请日期 1979.04.27
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 REDFERN, THOMAS P.
分类号 H03F1/30;H03F3/16;H03F3/18;H03F3/34;H03F3/345;(IPC1-7):H03K19/08;H03F3/04;H03F3/39 主分类号 H03F1/30
代理机构 代理人
主权项
地址