| 摘要 |
<p>PURPOSE:To produce a liquid crystal display element of good display grade by sputtering ion beams to the orientation film formed on an electrode surface by a diagonal vapor deposition method thereby decreasing the angle of orientation of said orientation film. CONSTITUTION:Material of SiO or MgF2 is diagonally evaporated to a substrate 1 provided with an eletrode 2, at about 10<-5> Torr degree of vacuum and about 85- 89 deg. incident angle to the substrate, whereby an orientation film 3 is formed (the orientation film of superior degree of orientation order S is obtained at about 20- 30 deg. orientation angle theta). Next, this is supported with inclination to an ion beam source 4 and is subjected to ion beam etching under conditions of about 10<-3>-10<-5> Torr vacuum degree and about 60-90 deg. incident angle to the substrate, so that the orientation angle theta is made about <=3 deg.. The electrode plate having the orientation film formed in the above-mentioned manner (small in orientation angle and superior in the degree of order) is particularly suited for liquid crystal display elements of high duty.</p> |
