METHOD OF PREPARING A GETTERED SEMICONDUCTOR WAFER

摘要

Gettered semiconductor wafers for integrated circuit device manufacture are prepared by grinding a layer of damage into the back face of the wafer to a depth of about 8-35 microns, heating the wafer to a temperature of about 800 DEG -1150 DEG C. for about 1 to 3 hours and quickly cooling the wafer to a temperature below about 600 DEG C., and polishing both sides of the wafer to form a polished, substantially damage-free front face and a smooth back face which has a residual layer of crystallographic damage to provide additional gettering during device manufacture.