发明名称 PEELING OF MONOCRYSTALLINE WAFER
摘要 PURPOSE:To realize the peeling method which eliminates stains on the wafers after the strain-free mirror finishing, facilitates the cleaning after the peeling and prevents damage and defects by a method wherein an adhesive wax is heated and molten immersing the wafer in a liquid. CONSTITUTION:When peeling the monocrystalline wafer 1 bonded on the grinding holder 3' with the adhesive wax 2', the wafer is immersed into the peeling liquid 6 heated above the melting point of the adhesive wax with the hot plate 4' to dissolve the wax by heat. The grinding holder 3' is retained in the container 7 with the guide base 5. As the wax is dissolved gradually by the peeling liquid 6 heated it is possible to peel the wafer 1' from the holder 3' effortlessly. The wafer 1' is placed on a teflon guide base 5 thereby eliminating defects due to contact.
申请公布号 JPS5612735(A) 申请公布日期 1981.02.07
申请号 JP19790087038 申请日期 1979.07.10
申请人 NIPPON ELECTRIC CO 发明人 ISHIKAWA MICHIO
分类号 H01L21/683;H01L21/304 主分类号 H01L21/683
代理机构 代理人
主权项
地址
您可能感兴趣的专利