| 摘要 |
<p>An insulated-gate field-effect-transistor (IGFET) quasi-static decoder for programming an electronically-programmable read-only memory (EPROM) applies to the floating gate of selected memory devices a programming voltage. Prior to selection, each row and column conductor of the memory is latched at a first voltage. Precharge circuitry responsive to a single precharge pulse establishes an enabling voltage for unlatching a selected row and column. The selected row and column is then coupled via a switch to a source of programming voltage.</p> |
