| 摘要 |
PURPOSE:To eliminate the occurrence of dislocation in a semiconductor wafer and obtain a uniform treatment layer thereon by heat treating the wafer, namely, diffusing and oxidizing the wafer at 15-17 deg.C/min of temperature rising speed from low temperature to predetermined temperature and at 4-6 deg.C/min therefrom to a diffusing temperature. CONSTITUTION:In order to avoid the occurrence of dislocation in a semiconductor wafer when forming an N<+>-type buried layer with As on the wafer, a wafer introducing furnace temperature is lowered, and a temperature rising speed is selected to 15-17 deg.C/min up to the temperature slightly lower than the diffusing temperature. In order to improve the external appearance of the diffused layer, the temperature rising speed thereafter up to the diffusing temperature is selected to a slow speed such as 4-6 deg.C/min. In this manner it can remarkably reduce the improper external appearance of the diffused layer due to the As compound and the number of dislocations, and can be particularly adapted for a heat treatment of a large bore wafer. |
