| 摘要 |
PURPOSE:To increase a SN ratio by forming the photoelectric transducer by a parallel connector between a photocondutive element and a diode for discharge, a charge storage element and a conversion amplifying element. CONSTITUTION:The photocondutive elements S1-0-S54-31 shaped by thin-film amorphous silicon or thin-film polycrystal silicon and the diodes h1-0-h54-31 for discharge are each connected in parallel, and one ends are connected in common at every plural pair. Capacitors C1-0-C54-31 are connected to the other ends of the parallel connectors, and charges are stored at speed corresponding to the incident luminous power of the photoconductive elements. Potential corresponding to the charges stored of the capacitors is supplied to the gates of MOS transistors A1-0-A54-31 for conversion and amplification, and selected by driving lines b1-b54, and signal currents are outputted to data lines D0-D31. |
