| 摘要 |
PURPOSE:To form a silicon epitaxial layer having uniform thickness for wafers by a method wherein an inner tube, whose tubular wall area is reduced as it extends across the reaction tube from a rection gas supply port, is provided between a reaction tube and a substrate wafer. CONSTITUTION:A plurality of substrate wafers 7 are disposed at predetermined intervals substantially intersecting perpendicularly the axis of the reaction tube 2 of reduced internal pressure. Reaction gas is supplied to the wafers 7 from the gas supply port 1 of the reaction tube 2 whereby the wafers are resistance-heated by the gas. The gas causes a silicon epitaxial layer to grow on the wafer 7, and is then exhausted from a gas exhaust port 4. An inner tube 5 whose tubular wall area is reduced as it traverses the reaction tube 2 along its axis from the gas supply port 1, is provided between the reaction tube 2 and the wafer 7, thereby forming a silicon epitaxial layer having uniform thickness for the respective wafers 7. |
