| 摘要 |
The semiconductor laser comprises a semiconductor substrate (1) of a first conductivity type, a multi-layer double heterostructure (2 to 4) including successively at least a first cladding semiconductor layer (2) of the first conductivity type, an active semiconductor layer (3), and a second cladding semiconductor layer (4) of a second conductivity type. The active semiconductor layer (3) has a narrower bandgap than those of the first and second cladding semiconductor layers (2 and 4, respectively). A stripe portion (30) with channels (40, 41) formed along both sides of the stripe (30) extends through the second cladding semiconductor layer (4) and the active semiconductor layer (3) to reach the first cladding layer (2). A current blocking layer (5 to 7) formed on the multi-layer double heterostructure except for the top surface of the stripe portion (30) includes a first blocking semiconductor layer (5) of the second conductivity type, a second blocking semiconductor layer (7) of the first conductivity type, and a third semiconductor layer (6) interposed between the first and second blocking semiconductor layers (5 and 7, respectively) and having a smaller carrier concentration than that of each of the first and second blocking semiconductor layers (5 and 7, respectively). A burying semiconductor layer (8) of the second conductivity type buries the top surface of the stripe portion (30) and the current blocking layer (5 to 7). A pair of electrodes (20, 21) supplies a voltage to bias the semiconductor laser which is excellent in high frequency response characteristic, performance and reliability due to its improved current confinement structure.
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