发明名称 |
Punch-through load devices in high density static memory cell |
摘要 |
A semiconductor memory of the static type employs a pair of cross-coupled driver transistors and a pair of access transistors along with load devices which are punch-through elements resembling short channel MOS transistors without gates. The punch-through elements each have an electrode integral with the drain of one of the driver transistors, and another electrode coupled to a voltage supply. A cell layout of very small size is possible.
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申请公布号 |
US4247915(A) |
申请公布日期 |
1981.01.27 |
申请号 |
US19790000622 |
申请日期 |
1979.01.02 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BARTLETT, KEITH G. |
分类号 |
G11C11/412;H01L27/11;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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