| 摘要 |
PURPOSE:To improve the cut-off property of a field effect type thyristor and simplify the structure of the thyristor by burying a plurality of low resistance layers in a base region. CONSTITUTION:Two P-type low resistance buried layers 13, 18 are formed in central N-type layers 11, 16, 19 interposed between a P<+>-type layer 12 and an N<+>- type layer 20, and an impurity is doped as low in resistance as possible in a P<++>- type buried layer 13 as one buried layer of the layers 13, 18. The interval therebetween is formed roughly, and the P<+>-type buried layer 18 of the other one of the buried layers is formed at an interval densely not so as to be lower in resistance than the layer 13, and a voltage is applied from the layer 20 to the respective layers to turn off it. |
