| 摘要 |
PURPOSE:To prevent a region near a channel from being contaminated by allowing a resin film to remain on an amorphous silicon film of a region interposed between a source electrode and a drain electrode and the end of the amorphous silicon film, and removing the resin film from the other region. CONSTITUTION:After Cr is accumulated on an insulator plate 1 of glass substrate, a gate electrode 2 is formed, and an SiO2 film or an Si3N4 film 3 and an amorphous silicon film 4 are continuously formed. After a resist film is spin coated, it is removed from a portion except a region 9 opposed to the electrode 2, a resist mask 5 is formed on the region 9, and an N-type amorphous silicon film 6 and a film 7 of NiCr are continuously formed. The films 7, 6 are removed from the region 9 opposed to the electrode 2, the films 7, 6, 4 are patterned to form source and drain electrodes 71, 72. Resin such as polyimide is spin coated to form a polyimide film 8 to cover the film 4. Thus, a channel region is not possibly contaminated to improve the reliability. |
