发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the generation of the crosstalk of the signal running on the connecting member provided in a through hole and the signal running on a semiconductor circuit by a method wherein a conductive substance layer, which is formed as if the conductive member is surrounded by the conductive substance layer and connected at least to a conductive member, is provided in an insulating layer. CONSTITUTION:A conductive substance layer 4 is formed in an insulating layer 31 leaving a space between the layer 4 and a connecting member 3 and coaxially surrounding the connecting member 3 by performing a vacuum evaporation method and the like, for example, and said conductive substance layer 4 is electrically connected to a conductive parallel-plate 21. As a result, a capacitance coupling is hardly generated between the connecting member 3, the first semiconductor circuit 11 and the second semiconductor circuit 12 through the intermediary of an insulating layer 31, and the crosstalk generating between the signal running on the connecting member 3 and the signal running on the first semiconductor circuit 11 and the second semiconductor circuit 12 can be prevented.
申请公布号 JPS62183551(A) 申请公布日期 1987.08.11
申请号 JP19860026165 申请日期 1986.02.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 KUMAMOTO TOSHIO;NAKAYA MASAO
分类号 H01L23/52;H01L21/3205;H01L27/00 主分类号 H01L23/52
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