| 摘要 |
A method of etching a silicon-substrate, wherein a protective layer is formed on the substrate and serves as an etching mask, at least one some areas of the surface of the substrate. A layer of mineral glass, adhering to the substrate, is used for this protective coating. The protective layer can be formed by the application of a mixture containing finely dispersed mineral glass and fixing agents, or a composition which will form mineral glass when heated, to the Si-substrate, by heating the mixture to form a layer of mineral glass adhering to the Si-substrate. If photo-polymerizable components are used in this mixture, the etching mask of glass may be produced by way of photolithography. The invention further includes a Si-substrate provided with a mineral glass protective layer. |
