发明名称 |
Resistive Schottky barrier gate microwave switch |
摘要 |
A Schottky barrier resistive gate switch which may be utilized for microwave switching. First and second metallizations which serve as signal inputs overlie a semiconductive substrate, making contact with a doped region thereof. A gate of high resistivity material which forms a Schottky barrier with the substrate is positioned between the metallizations. The doped region defines a channel, the conductivity of which is adjusted by the regulation of the Schottky depletion region formed therein.
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申请公布号 |
US4245230(A) |
申请公布日期 |
1981.01.13 |
申请号 |
US19790079854 |
申请日期 |
1979.09.28 |
申请人 |
HUGHES AIRCRAFT COMPANY |
发明人 |
KWOK, SIANG-PING;LADD, JR., GLENN O. |
分类号 |
H01L29/47;H01L29/78;H01L29/812;(IPC1-7):H01L29/64;H01L29/80 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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