| 摘要 |
PURPOSE:To prevent an Al intrusion to a diffusion layer when an excessive voltage is applied to a pad by interpositioning a polycrystalline Si layer between the Al wiring layer which is connected to the bonding pad and the diffusion layer in a semiconductor substrate when the former is connected to the latter. CONSTITUTION:When installing the Al wiring layer 71, one end of which is connected to the bonding pad, on a reverce conductive type diffusion layer 74 formed on a semiconductor substrate 75, the following procedures are performed. A protective layer 73, consisted of a polycrystalline Si, is connected to one end of the layer 74 and an SiO2 film 72 is coated on the whole surface while the embedding of the said layer 74 is performed. Then, a hole is made on the film 72 corresponding to the other end of the layer 73 and the other end of an Al wiring layer 71, one end of which is connected to the bonding pad, is installed to the said hole while connecting it to the layer 73. In such way, the penetration of the Al to the layer 74 and the substrate 75, through the layer 74, is prevented and the input or the output of the IC and be protected. |
