| 摘要 |
<p>PURPOSE: To provide an electron emission body which is easily modulated in its electron emission by constituting its electric resonance cavity of an electron emission semiconductor layer and a composite semiconductor layer. CONSTITUTION: When an electron emission potential is applied to a solid object 1, it emits in its semiconductor layer 2 for electron emission electrons which are accelerated toward its composite semiconductor layer 5. The layer 5 constitutes an electron emission source for emitting electrons through a tunnel effect. The electrons butt into a layer 30 at a density obtained by modulating the output of the layer 5 as a function of values of the resonance frequency of an electric resonance cavity, and then are increased in their number through an unbalanced effect caused by a voltage applied between the plane of the layer 30 opposite to the plane common to the layer 5 and a secondary layer 13 of the layer 5. The radiation gets harder as the electrons reach a layer 40, which decreases the electron affinity of the semiconductors.</p> |
