| 摘要 |
<p>USE OF NITRIC OXIDE TO CLEAN A SEMICONDUCTOR A procedure for cleaning a semiconductor material of impurities which reside on the surface of the material is disclosed. The procedure is indicated for use prior to one or more thermal processing steps for the material, and involves the exposure of the material to a cleaning gas comprised of nitric oxide and, in a presently preferred form, of anhydrous hydrochloric acid as well.</p> |
