| 摘要 |
<p>In the prodn. of zones of high specific resistance in a semiconductor substrate, deuterons alone are implanted in the zone with energies up to a max.value corresp. to the required depth of penetration into the substrate. The substrate consists of GaAs. The process is cheaper than usual and gives prods.suitable for less severe applications, the temp. stability being not quite as high as that obtd. in another process for proton implantation, which is more costly and time consuming.</p> |
