发明名称 POLYMERIC RESIST MASK COMPOSITION
摘要 <p>A fluorine-containing polymethacrylic ester of the formula wherein R1 and R2 are hydrogen, methyl, ethyl, propyl, chloromethyl, or trifluoromethyl; R3 and R4 are hydrogen, methyl or fluorine, and R5 is a fluoroalkyl radical of 1 to 8 carbons, fluorine, or bromine, and n is about 100 to about 20,000, is highly sensitive to electron beams, X-rays, and ultraviolet rays (at low energy density such as 10-7 to 10-6 C/cm2)and is used as a polymeric resist composition on a semiconductor substrate, for example for the manufacture of large scale integrated circuits.</p>
申请公布号 CA1092410(A) 申请公布日期 1980.12.30
申请号 CA19770270235 申请日期 1977.01.21
申请人 NIPPON TELEGRAPH & TELEPHONE PUBLIC CORPORATION 发明人 KAKUCHI, MASAMI;SUGAWARA, SHUNGO;MURASE, KEI;MATSUYAMA, KENTARO
分类号 G03F7/004;C08F20/00;C08F20/22;G03F7/039;H01F41/34;H01L21/027;(IPC1-7):05D3/06 主分类号 G03F7/004
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