| 发明名称 |
METHOD FOR DEPOSITING ELEMENTAL SILICON FROM THE GASEOUS PHASE |
| 摘要 |
<p>The depositing of Si upon a rod-shaped carrier which is heated in a flowing reaction gas adapted to separate Si and deposit it upon the surface of the said carrier, the flow of the said reaction gas being so regulated that the rate of deposition per cm2 of the carrier surface remaining constan?.</p> |
| 申请公布号 |
CA1091992(A) |
申请公布日期 |
1980.12.23 |
| 申请号 |
CA19770273189 |
申请日期 |
1977.03.04 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
REUSCHEL, KONRAD;DIETZE, WOLFGANG;RUCHA, ULRICH |
| 分类号 |
C01B33/02;C01B33/035;C23C16/22;C23C16/24;C23C16/44;C23C16/52;H01L21/205;(IPC1-7):01J17/32 |
主分类号 |
C01B33/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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