Light emission element using a polycrystalline semiconductor material of III-V group compound

摘要

A light emission element using a plycrystalline semiconductor material of III-V group compound comprises an n type semiconductor polycrystalline layer and a p type semiconductor polycrystalline layer. In such a light emission element, the n type semiconductor polycrystalline layer and the p type semiconductor polycrystalline layer comprise a light emitting area formed by polycrystals having the average grain size of 0.6 mu m or more, and a wiring area formed by polycrystals having the average grain size of 0.5 mu m or less. Hence, the light emission efficiency is enhanced as well as improving the reliability of the element.