| 摘要 |
<p>PURPOSE:To eliminate the adverse affect of alpha-ray to a semiconductor chip in the structure of a semiconductor device by confronting a semiconductor chip having a semiconductor element on the surface with material containing no radioactive substance having a conductive wiring layer on the surface on a chip supporting base. CONSTITUTION:A semiconductor chip substrate 1 having a memory cell 12 is confronted with a silicon chip supporting base 2 containing no radioactive substance having a conductive wiring layer 21 of nickel thin film 21A and a gold thin film 21B on a silicon oxide insulating film 23 on the respective surfaces, and the base 2 is fusion-bonded through a gold silicon solder 22 to a ceramic container 3. Further, a ceramic cap 4 and an external lead terminal 5 are secured via low melting glass 7 to the container 3 to seal the semiconductor chip.</p> |
