| 摘要 |
PURPOSE:To prevent overetching of an aluminum electrode or a wiring in the manufacturing process of a semiconductor device, wherein an etching by phototype process is used, by making a hole by etching after an aluminum light-shading film was formed and then by making a hole on an oxidized insulation film by etching. CONSTITUTION:An N-type semicoductor layer 2, a base diffusion layer 3, a collector diffusion layer 4 and an emitter diffusion layer 5 are formed on a P-type semiconductor substrate 1. A hole is made on an oxidation layer 6, an aluminum electrode 7 is formed and an oxidized insulation film 8 is formed. Then an aluminum light- shading film 9 is coated by evaporation, a bonding pad section is etched by phototype process and a hole is opened. And then, the oxidized insulation film 8 section of the said hole is etched and a hole is opened. |
