| 摘要 |
PURPOSE:To permit the constitution of grown layers to be suddenly changed by allowing material for crystal growth supplied for a substrate to be interchanged with each other in an extraordinarily short time. CONSTITUTION:An InP substrate 10 is placed on a mounting table 14 opposed to a supply port 17, and the inside of a bell jar 2, which has a desired gas-atmosphere, is heated. The atmospheric gas is supplied from the supply port 17, and at the same time, H2 is supplied from a supply port 21. These gases, which flow only rightward due to a gas baffle plate 23, are discharged directly through an exhaust pipe 7. On the other hand, a fixedly concentrated mixed gas of In(C2H5)3 and PH3 is introduced from a supply port 18, and at the same time, H2 is supplied from a supply port 22. These gases, which do not mix with the gases from the supply port 17 and 21, flow only leftward. When the substrate 10 reaches a fixed temperature, the mounting table 14 is turned by 180 deg. in orde to set the substrate in the gas from the supply port 18 so that InP is deposited on the substrate 10. Then the gas from the supply port 17 is changed over to a fixed gas, and the mounting table 14 is turned again by 180 deg.. |
