| 摘要 |
PURPOSE:To improve the yields of a charge transfer device of high density and very small dimensions by the method wherein No.1 layers and No.2 layers of transfer electrodes are connected respectively, and further, the diffused layer to be provided below the end of each transfer electrode is formed by self-matching. CONSTITUTION:SiO2 12, conducting poly Si 13 and SiO2 14 are laminated on p- type Si substrate 11. By means of resist mask 15, film 14 is removed. By injecting B ions p-layer 16 is produced. Next, by evaporating Al 17 on the window opening part, maks 17 is formed. By means of resist mask 18, Al 17 is removed alternately. Next, by means of resist mask 19, film 14 is removed alternately. Subsequently, using Al 17 and film 14 as mask, electrode 18 of No.1 layer is formed. Al 17 is removed, and then SiO2 films 12 and 14 are removed, and by covering with SiO2 film 20 newly and also with poly Si film 21, a transfer electrode of No.2 layer is selectively formed. Electrodes 13 and 21 are respectively connected. This completes the process. By this structure, the problems of short circuiting trouble of transfer electrodes and positioning of the p-layer below the transfer electrode are solved and the yields are improved. |
