| 摘要 |
PURPOSE:To obtain a projection without deviation in position by the method wherein lead end projections are connected to plural contact regions of a semiconductor chip by gang-bonding, and at this time each projection is made by etching using a positive type photoresist. CONSTITUTION:Positive type photoresist film 502 is coated on one surface of conducting layer 501, which is to become a lead. The other surface is provided with protective resist 503. Next, exposure and developing are operated on film 502 by using a circuit pattern mask, and thereby circuit pattern resist film 504 is formed. By using this as a mask, conducting layer 501 is etched, and thereby lead 505 is formed. Subsequently, projection resist pattern 506 is provided in the region where a projection is to be formed, and by half-etching lead 505, a projection of a desired height is produced below pattern 506. By this, it is possible to obtain a projection of high positional precision by simple processes and improve bonding yields of IC. |
